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TranslationMobile

分子束磊晶法；分子子束外延

"molecular" in Chinese : adj. 分子的,由分子形成的,分子內(nèi)[間]的。 adv ...
"beam" in Chinese : n. 1.梁，棟梁，桁條；(船的)橫梁。 2.船幅；(動(dòng) ...
"epitaxy" in Chinese : n. 【物理學(xué)】(晶體)取向附生，外延。 epitaxi ...
"mbe (= molecular beam epitaxy)mbe" in Chinese : 分子束磊晶
"epitaxy, molecular-beam" in Chinese : 分子束外延
"laser molecular beam epitaxy" in Chinese : 激光分子束外延
"molecular beam epitaxy" in Chinese : 分子束磊晶成松; 分子束外延
"organic molecular beam epitaxy" in Chinese : 有機(jī)分子束外延
"silicon molecular beam epitaxy" in Chinese : 硅分子束外延
"electron beam epitaxy" in Chinese : 電子束外延生長(zhǎng)
"electron beam epitaxy (ebe)" in Chinese : 電子束外延生長(zhǎng)
"ion beam epitaxy" in Chinese : 離子束外延
"mbe" in Chinese : 分子束磊晶; 分子束外延; 姆貝河
"beam, molecular" in Chinese : 分子束
"molecular beam" in Chinese : 分子束; 分子注

Examples

High quality single - crystal zns - based ii - vi thin films have been prepared on gaas and gap substrate using molecular beam epitaxy ( mbe ) technique . successful n - type doping of znsxse1 - x alloy using aluminum source has been carried out
本文研究了在gaas和gap襯底上，本征型和n型al摻雜zns基單晶薄膜的分子束外延生長(zhǎng)，獲得了高質(zhì)量的單晶外延薄膜。
To study its properties and obtain high quality thin films , a variety of techniques have been used such as molecular beam epitaxy ( mbe ) , metal organic chemical vapor deposition ( mocvd ) , magnetron sputtering , pulsed laser deposition , to prepare zno thin films
為了獲得高質(zhì)量的氧化鋅薄膜材料，人們已采用分子束外延，有機(jī)化學(xué)汽相沉積，脈沖激光沉積，磁控濺射等各種技術(shù)來制備氧化鋅薄膜材料。
Fortunately , with the improvement in the material growth , gap1 - xnx alloys with nitrogen concentration as high as several percentage have been successfully grown by molecular beam epitaxy ( mbe ) or metalorganic vapor - phase epitaxy ( movpe ) . more and more attentions have been paid to this alloy for its distinct property such as the giant band gap and effect , for this reason , gap1 - xnx alloys are usually called abnormal alloys
人們研究發(fā)現(xiàn)， gapn混晶具有一些獨(dú)特的光電性質(zhì)，例如其帶隙不是gap和gan的線性內(nèi)插值，而是存在著較大的帶隙降低和巨大的帶隙彎曲系數(shù)，因此gapn混晶又被稱為“反常”混晶，從而引起了人們?cè)絹碓蕉嗟年P(guān)注，并成為當(dāng)前的一個(gè)研究熱點(diǎn)。
Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer . the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ) , scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文采用分子束外延( mbe )方法在gaas ( 001 )襯底上優(yōu)化低溫緩沖層生長(zhǎng)條件制備了異質(zhì)外延insb薄膜,采用原子力顯微鏡( afm ) 、掃描電鏡( sem )與x射線雙晶衍射( dcxrd )等方法研究了insb / gaas薄膜的表面形貌與結(jié)晶質(zhì)量。